FORVIA HELLA has selected the new CoolSiC™ Automotive MOSFET 1200 V from Infineon Technologies AG for its next generation 800 V DCDC charging solution. Designed for on-board charger and DCDC applications in 800 V automotive architectures, Infineon’s CoolSiC MOSFET comes in a Q-DPAK package. The device uses top-side cooling (TSC) technology, which enables excellent thermal performance, easier assembly and lower system costs.
Infineon’s new CoolSiC Automotive MOSFET 1200 V in the Q-DPAK package is based on Gen1p technology and offers a drive voltage in the range of V GS(off)= 0 V and V GS(on)= 20 V. The 0 V turn-off enables unipolar gate control, which simplifies design by reducing the number of components in the PCB. With a creepage distance of 4.8 mm, the package achieves an operating voltage of over 900 V without the need for additional insulation coating. Compared to backside cooling, the TSC technology ensures optimized PCB assembly, reducing parasitic effects and resulting in significantly lower leakage inductances. As a result, customers benefit from lower package parasitics and lower switching losses. Heat dissipation is further improved by diffusion soldering the chip with .XT technology.
