The advanced silicon carbide (SiC) chip will be implemented in a widely extended portfolio using the popular Easy module family, along with discrete packages using .XT interconnect technology. The M1H chip offers high flexibility and is suitable for solar energy systems, such as inverters, that have to meet peak demand. The chip is also ideal for applications such as fast EV charging, energy storage systems and other industrial applications.
The latest advancements of the CoolSiC base technology enable a significantly larger gate operation window that improves the on-resistance for a given die size. Simultaneously, the larger gate operation window provides a high robustness against driver- and layout-related voltage peaks at the gate, without any restrictions even at higher switching frequencies. Along with the M1H chip technology also the related housings have been adopted in technology and package variants to enable higher power densities and more options for design engineers to improve on application performance.
Infineon’s CoolSiC™ M1H 1200 V SiC MOSFETs will be integrated into the Easy family to further improve the Easy 1B and 2B modules. In addition, a new product which enhances the Easy 3B module will also be launched. The roll-out of new chip sizes maximizes flexibility and ensures the broadest industrial portfolio. With the M1H chip, the on-resistance of the modules can be significantly improved, making the devices more reliable and efficient.
Infineon’s CoolSiC™ MOSFET 1200 V M1H portfolio includes TO247-3 and TO247-4 discrete packages with new ultra-low on-resistances of 7 mΩ, 14 mΩ and 20 mΩ. They are easy to design-in, especially due to the gate voltage overshoots and undershoots with the new maximum gate-source voltage down to -10 V. The discrete devices feature the .XT interconnection technology which leads to a thermal benefit that can be used to increase the output power up to 15 percent.
