SiC power switches in standard packages. Designed for electric vehicle applications with system voltages around 400 V or around 800 V.
Switching speed adjustable via external gate resistors
Bosch Dual Channel Trench Gate Technology for low RDS(on) × A
Available in TO263-7, TO247-4 and TO247-3
Qualified according to AEC-Q101
The BT1M120 family of silicon carbide switches handles voltages up to 1,200 V. The packaged versions are designed for high power applications like on-board chargers, DC/DC converters and inverters in (hybrid) electric vehicles with system voltages around 800 V.
The robust MOSFETs reduce conduction and switching losses and allow for higher switching frequencies.
For bare-die applications such as inverter modules, also non-packaged chip versions are available.
