 Package TO247-4 |  Package TO263-7 |
The BT1M120 family of silicon carbide (SiC) switches handles voltages up to 1,200 V.
The packaged versions are designed for high power applications like on-board chargers, DC/DC converters and inverters in (hybrid) electric vehicles with system voltages around 800 V.
The robust MOSFETs reduce conduction and switching losses and allow for higher switching frequencies.
For bare-die applications such as inverter modules, also non-packaged chip versions are available.
The robust MOSFETs reduce conduction and switching losses and allow for higher switching frequencies.
For bare-die applications such as inverter modules, also non-packaged chip versions are available.
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Available in SMD and THT packages
Bare-die chips on demand
Bosch dual channel trench gate technology for lower RDS(on) × A
Switching speed adjustable with gate resistors
AEC-Q101 qualified
Bare-die chips on demand
Bosch dual channel trench gate technology for lower RDS(on) × A
Switching speed adjustable with gate resistors
AEC-Q101 qualified
